GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy

A series of GaSb/ZnTe double-heterostructures proposed for laser diode applications was successfully grown by molecular beam epitaxy using GaSb (001) substrates. During the growth of GaSb on ZnTe, a temperature ramp was applied for the region near the GaSb/ZnTe interface to protect the material from damage due to thermal evaporation. Post-growth characterization using high-resolution X-ray diffraction and transmission electron microscopy reveals low defect density and coherent interface morphology. Strong photoluminescence emission is observed at temperatures up to 200 K, indicating good optical properties.

► GaSb/ZnTe DH structure is proposed for use in light emitting devices and applications.
► High quality GaSb/ZnTe DH structures have been successfully grown on GaSb substrates using MBE.
► A temperature ramp is applied during growth to protect materials from being damaged.
► Post-growth characterization reveals overall excellent structural and optical properties.