کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792743 | 1023656 | 2010 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Temperature effects during the growth of InxGa1−xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Substrate temperature rises of over 200 °C have been observed for growth of InN and In-rich InGaN on GaAs substrates. We present a model to show that it is not the narrow bandgap that is responsible for the large temperature rises observed during growth of InN, but the large bulk background carrier concentration. We also show how the substrate temperature rise during growth increases as a function of increasing indium composition and the effects of controlling the substrate temperature on film quality.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 14, 1 July 2010, Pages 2083–2088
Journal: Journal of Crystal Growth - Volume 312, Issue 14, 1 July 2010, Pages 2083–2088
نویسندگان
J.L. Hall, A.J. Kent, C.T. Foxon, R.P. Campion,