کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1792860 | 1023660 | 2011 | 4 صفحه PDF | دانلود رایگان |
Strain-balanced growth of highly mismatched quantum wells is of crucial importance for obtaining high performance devices such as quantum-well solar cells and quantum cascade lasers. In situ curvature measurement successfully captured strain accumulation in lattice-mismatched InGaAs/GaAsP multiple quantum wells that were grown by metal–organic vapor phase epitaxy. Average strain in the layers was detectable using the slope of curvature versus layer thickness. High-sensitivity measurement made it possible to detect strain accumulation and release within a single layer of InGaAs and GaAsP, respectively, by looking at the see-saw-like oscillation of curvature, which is an indication of successful strain balancing in a period of well/barrier. In situ curvature monitoring makes it easier and more efficient to adjust growth conditions for perfect strain balancing, as compared with conventional repetition of growth and X-ray diffraction measurement.
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 1–4