کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1792896 | 1023660 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of growth pressure on coalescence thickness and crystal quality of GaN deposited on 4H–SiC
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of growth pressure on the coalescence thickness and the crystal quality of GaN deposited on 4H–SiC by low pressure metalorganic vapor phase epitaxy was studied. It was shown that growth pressure has an impact on the surface roughness of epilayers and their crystal quality. GaN coalescence thicknesses were determined for the investigated growth pressures. The GaN layers were characterized by AFM and HRXRD measurements. HEMT structures were also fabricated and characterized. Among the growth pressures studied, 50, 125 and 200 mbar, 200 mbar was found to be most suitable for GaN/SiC epitaxy.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 168–173
Journal: Journal of Crystal Growth - Volume 315, Issue 1, 15 January 2011, Pages 168–173
نویسندگان
Piotr Caban, Wlodek Strupinski, Jan Szmidt, Marek Wojcik, Jaroslaw Gaca, Ozgur Kelekci, Deniz Caliskan, Ekmel Ozbay,