کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793354 1023673 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Growth and characterization of thin epitaxial Co3O4(111) films
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Growth and characterization of thin epitaxial Co3O4(111) films
چکیده انگلیسی
The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystal α-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[1¯21¯]‖α-Al2O3(0001)[101¯0], as determined from in situ electron diffraction. Film stoichiometry is confirmed by X-ray photoelectron spectroscopy, while ex situ X-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/α-Al2O3 interface and improved surface crystallinity, as shown by X-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1×1), which can be explained in terms of a surface inversion in the spinel structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 9, 15 April 2009, Pages 2648-2654
نویسندگان
, , , ,