کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793354 | 1023673 | 2009 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and characterization of thin epitaxial Co3O4(111) films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
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چکیده انگلیسی
The growth and characterization of epitaxial Co3O4(111) films grown by oxygen plasma-assisted molecular beam epitaxy on single crystal α-Al2O3(0001) is reported. The Co3O4(111) grows single crystalline with the epitaxial relation Co3O4(111)[1¯21¯]âα-Al2O3(0001)[101¯0], as determined from in situ electron diffraction. Film stoichiometry is confirmed by X-ray photoelectron spectroscopy, while ex situ X-ray diffraction measurements show that the Co3O4 films are fully relaxed. Post-growth annealing induces significant modifications in the film morphology, including a sharper Co3O4/α-Al2O3 interface and improved surface crystallinity, as shown by X-ray reflectometry, atomic force microscopy and electron diffraction measurements. Despite being polar, the surface of both as-grown and annealed Co3O4(111) films are (1Ã1), which can be explained in terms of a surface inversion in the spinel structure.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 9, 15 April 2009, Pages 2648-2654
Journal: Journal of Crystal Growth - Volume 311, Issue 9, 15 April 2009, Pages 2648-2654
نویسندگان
C.A.F. Vaz, V.E. Henrich, C.H. Ahn, E.I. Altman,