کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793448 | 1023677 | 2010 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cellular structures in Czochralski-grown SiGe bulk crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Cellular structures in Czochralski-grown SiGe bulk crystal Cellular structures in Czochralski-grown SiGe bulk crystal](/preview/png/1793448.png)
چکیده انگلیسی
A high purity SixGe1−x alloy (x0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1065–1068
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1065–1068
نویسندگان
I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto,