کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793453 1023677 2010 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Crystal growth of bulk ternary semiconductors: Comparison of GaInSb growth by horizontal Bridgman and horizontal traveling heater method
چکیده انگلیسی

Results from the growth of bulk Ga1−xInxSb crystals are presented. The primary challenge for ternary crystal growth is to control the composition and electrical resistivity while also reducing the concentration of defects. A modified horizontal traveling heater method (HTHM) growth process is described which accomplishes these goals. This method uses excess indium as a solvent, allowing growth of the ternary crystal at a given composition, below the liquidus temperature of the desired alloy. Lower temperature growth reduces the density of native defects such as gallium vacancies. The horizontal traveling heater method produces a zone-leveling effect on the alloy composition, so that a uniform composition crystal is obtained. The solute distribution achieved by HTHM is compared with a crystal grown by the horizontal Bridgman method.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 8, 1 April 2010, Pages 1090–1094
نویسندگان
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