کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793576 1023679 2009 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Interface shape control using localized heating during Bridgman growth
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Interface shape control using localized heating during Bridgman growth
چکیده انگلیسی

Numerical calculations were performed to assess the effect of localized radial heating on the melt–crystal interface shape during vertical Bridgman growth. System parameters examined include the ampoule, melt and crystal thermal conductivities, the magnitude and width of localized heating, and the latent heat of crystallization. Concave interface shapes, typical of semiconductor systems, could be flattened or made convex with localized heating. Although localized heating caused shallower thermal gradients ahead of the interface, the magnitude of the localized heating required for convexity was less than that which resulted in a thermal inversion ahead of the interface. A convex interface shape was most readily achieved with ampoules of lower thermal conductivity. Increasing melt convection tended to flatten the interface, but the amount of radial heating required to achieve a convex interface was essentially independent of the convection intensity.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 8, 1 April 2009, Pages 2321–2326
نویسندگان
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