کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1793754 1023681 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
Impurity engineering of Czochralski silicon used for ultra large-scaled-integrated circuits
چکیده انگلیسی
Impurities in Czochralski silicon (Cz-Si) used for ultra large-scaled-integrated (ULSI) circuits have been believed to deteriorate the performance of devices. In this paper, a review of the recent processes from our investigation on internal gettering in Cz-Si wafers which were doped with nitrogen, germanium and/or high content of carbon is presented. It has been suggested that those impurities enhance oxygen precipitation, and create both denser bulk microdefects and enough denuded zone with the desirable width, which is benefit of the internal gettering of metal contamination. Based on the experimental facts, a potential mechanism of impurity doping on the internal gettering structure is interpreted and, a new concept of 'impurity engineering' for Cz-Si used for ULSI is proposed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 3, 15 January 2009, Pages 837-841
نویسندگان
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