کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1793834 | 1023684 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Microstructural properties and initial growth behavior of InN nanobats grown on a Si(1 1 1) substrate
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Bat-like InN nanostructures were successfully grown on GaN/AlN/Si(1 1 1) substrates using molecular beam epitaxy method. The initial growth behavior and structural properties of InN nanobats were studied from a nanostructural point of view. During the initial stage of the growth, a nucleation process and a shape-decision process took place in which 3-dimensional (3-D) GaN nanoislands and nanorods were formed on AlN initiation layer/Si substrate. This was followed by the independent growth of 3-D InN nanoislands and nanorods. Lateral expansion of the InN nanobats was observed, and the diameter of InN bats then reached a fixed value.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 312, Issue 5, 15 February 2010, Pages 662–666
Journal: Journal of Crystal Growth - Volume 312, Issue 5, 15 February 2010, Pages 662–666
نویسندگان
Y.H. Kim, W.S. Yun, H. Ruh, C.S. Kim, J.W. Kim, Y.H. Shin, M.D. Kim, J.E. Oh,