MOVPE growth of Ga(As)SbN on GaSb substrates

GaSb1−yNy and GaAs1−y−zSbyNz alloys on GaSb substrates were grown by metalorganic vapor phase epitaxy (MOVPE) as potential materials for mid-infrared wavelength emission. Nitrogen incorporation was found to increase with the presence of As in GaAsSbN when compared with that of GaSbN. Low-temperature (LT) photoluminescence (PL) measurements indicated the co-addition of nitrogen and arsenic reduced the energy bandgap relative to that of GaSb. LT (16 K) PL emission near 2.25 μm was observed from GaAsSbN with an arsenic content of ∼10% and a nitrogen content of ∼0.08%.