Growth of non-polar (1 1 2¯ 0)GaN on a patterned (1 1 0)Si substrate by selective MOVPE

Selective MOVPE of a (1 1 2¯ 0) a-plane GaN was attempted on a patterned (1 1 0)Si substrate. The growth of GaN was initiated on a (1¯ 1 1) side wall of a (1 1 0)Si substrate which was prepared by KOH anisotropic etching. Growth processes and the propagation/annihilation of defects were investigated as a function of growth temperature and the pressure. A dark spot density as low as 3×107 cm−2 was achieved by the specific low-pressure growth. A smooth surface (AFM RMS value of 0.25 nm) was achieved by the high-pressure growth conditions.