کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1794239 | 1023693 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
GaAs nanowire (NW) heterostructures with four GaAsSb inserts were grown on GaAs(1Â 1Â 1)B substrates by Au-assisted molecular beam epitaxy (MBE). Structural characterization of the NWs showed that the transition between the GaAs and GaAsSb heterojunction is atomically abrupt and that the GaAs crystallographic phase is mainly wurtzite with some stacking faults, whereas the GaAsSb phase is zinc blende and free from twinning defects. Interestingly, the growth rates of the GaAs segments and GaAsSb inserts were observed to vary with growth time. We attribute this behavior to the effect of the inclined molecular beams with respect to the substrate surface in the MBE growth chamber. Further, the mole fraction of Sb in the GaAsSb insert was determined by energy-dispersive X-ray spectrometry and was found to increase with the inserts position along the NW.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1847-1850
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1847-1850
نویسندگان
D.L. Dheeraj, G. Patriarche, H. Zhou, J.C. Harmand, H. Weman, B.O. Fimland,