کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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1794252 | 1023693 | 2009 | 4 صفحه PDF | دانلود رایگان |
Optimization of various growth parameters for type-II 13 MLs InAs/7 MLs GaSb strained layer superlattices (SLSs) (λcut-off ∼8 μm at 300 K), grown by solid source molecular beam epitaxy, has been undertaken. This includes a systematic study to investigate the influence of the effect of the growth temperature and the thickness of an InSb layer formed at the GaSb-on-InAs interface on the properties of the superlattice. We present optical and structural characterization of these SLS structures, using high-resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM) and cross-sectional scanning transmission electron microscope (STEM). Optimized growth parameters were then used to grow a 2-μm-thick active region for a SLS detector designed to operate in the long-wave infrared (LWIR) region, which demonstrated full-width half-maximum (FWHM) of 16 arcsec for the first SLS satellite peak and nearly zero lattice mismatch between zero-order SLS peak and GaSb substrate.
Journal: Journal of Crystal Growth - Volume 311, Issue 7, 15 March 2009, Pages 1901–1904