Point defect behavior in Si crystal grown by electromagnetic Czochralski (EMCZ) method

Si single crystals are grown by electromagnetic Czochralski (EMCZ) and magnetic Czochralski (MCZ) methods, and the effect of the melt convection induced by the electromagnetic force, EMF, on point defect behavior, the shape of the crystal-melt interface, oxygen concentration and its distribution in the crystal is experimentally investigated. When the melt rotation induced by EMF is in the same direction of the crystal rotation, the melt rotation makes the crystal-melt interface concave, and the critical growth rate for defect-free crystal increases. The melt convection induced by EMF decreases the oxygen concentration. In the case of the melt rotation due to EMF in the opposite direction to the crystal rotation, EMF results in the decrease of the critical growth rate. The point defect behavior in EMCZ crystal is compared with one in MCZ crystal.