کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795788 1023729 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
3D computation of oxygen transport in Czochralski crystal growth of silicon considering evaporation
چکیده انگلیسی

For Czochralski (Cz) growth of silicon single crystals, 3D unsteady simulations of the oxygen transport in the turbulent melt flow were conducted using a new formulation for the evaporation at the free surface found by Sakai et al. [Electrochem. Solid-State Lett. 5 (8) (2002) G72]. Compared with 2D results from literature, the computed oxygen concentration now fits the experimental data better, showing lower values in the critical region beneath the crystal than in previous simulations, which mostly arises from the more accurate prediction of the flow field. Further computations of Cz configurations show how the oxygen distribution can be influenced by rotation of the crucible and crystal.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 303, Issue 1, 1 May 2007, Pages 146–149
نویسندگان
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