کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1795953 1524485 2007 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200 °C)
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
A new photocatalyzer InNxOy film grown by ArF excimer laser-induced MOCVD at low temperature (RT∼200 °C)
چکیده انگلیسی
Using the ArF excimer laser-induced MOCVD method, InNxOy thin films are grown on a glass substrate. The photolytical decomposition of NH3 enables to grow them even at room temperature. It is found that the InNxOy thin films grown at a temperature less than 250 °C show an excellent photocatalytic decomposition of H2S under UV irradiation, while the activity of the films grown at a temperature higher than 300 °C is very small, less than 14 of that for the low-temperature films. The excellent photocatalytic activity for the low-temperature films is closely related to the amorphous phase of the films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 298, January 2007, Pages 390-393
نویسندگان
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