کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1796658 | 1023751 | 2006 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies on MOVPE growth of GaP epitaxial layer on Si(0Â 0Â 1) substrate and effects of annealing
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Growth of gallium phosphide layer on silicon substrate has been carried out using metal-organic vapor phase epitaxy. Epitaxial layers were grown at 845 °C with a V/III ratio of 100 and a growth rate of 1.7 Ã
 sâ1at a reactor pressure of 30 mbar. The nominal thickness of the gallium phosphide epitaxial layer is â¼600 nm as measured by cross-sectional scanning electron microscopy. Growth of gallium phosphide epilayer is confirmed by Raman spectra studies. High-resolution X-ray diffraction studies show that the epilayer is of single crystalline nature and structurally coherent with silicon substrate. It is also inferred from these measurements that the in- and out of plane strain arising from small mismatch confirms a relaxed epilayer. As-grown epilayer shows p-type behavior with a hole carrier density of â¼1.2Ã1018cmâ3 and hole mobility 114 cmâ2V sâ1 at room temperature. Annealing at 550 °C for 10 min shows significant improvements in crystalline quality of the epilayer. The annealed layer shows a reduced hole density (â¼6.7Ã1017cmâ3) and increased hole mobility (155 cmâ2 V sâ1).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 293, Issue 1, 15 July 2006, Pages 5-13
Journal: Journal of Crystal Growth - Volume 293, Issue 1, 15 July 2006, Pages 5-13
نویسندگان
V.K. Dixit, Tapas Ganguli, T.K. Sharma, Ravi Kumar, S. Porwal, Vijay Shukla, Alka Ingale, Pragya Tiwari, A.K. Nath,