Characterization of undoped and Te-doped GaSb crystals grown by the vertical feeding method

Undoped and Te-doped GaSb ingots have been grown by the vertical feeding method. The structural, optical and electrical properties of the grown crystals were respectively investigated by X-ray diffraction, transmission electron microscopy, cathodoluminescence spectroscopy and Hall effect measurements. Undoped samples show good crystalline and electrical properties. Te-doped material presents a clear polycrystalline character and a deviation from axial segregation laws found for crystals grown by classical techniques. The obtained results allow us to draw some conclusions about the solidification mechanism associated to the growth conditions used in our feeding experiments.