کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1797453 | 1023789 | 2006 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of V/III ratio in AlN and AlGaN MOVPE
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of V/III ratio in AlN and AlGaN MOVPE Effect of V/III ratio in AlN and AlGaN MOVPE](/preview/png/1797453.png)
چکیده انگلیسی
Experimental studies of AlN and AlGaN deposition in a 3×2″ Thomas Swan close-coupled showerhead reactor have revealed the effect of growth rate reduction at enhanced ammonia and group-III flow rates. Detailed modeling was made of gas-phase chemistry, taking into account parasitic reactions as well as formation and growth of nanoparticles. The kinetics of interactions between trimethylaluminium (TMAl) and ammonia explains the presence of nanoparticles at high ammonia/TMAl flow rates, and their absence at low ammonia/high TMAl or high ammonia/low TMAl flow rates. It is shown that the growth efficiency can be increased by reduction of the carrier gas flow rate at relatively low V/III ratios, or by total reactor pressure decrease.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 601–604
Journal: Journal of Crystal Growth - Volume 287, Issue 2, 25 January 2006, Pages 601–604
نویسندگان
A.V. Lobanova, K.M. Mazaev, R.A Talalaev, M. Leys, S. Boeykens, K. Cheng, S. Degroote,