کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1811698 | 1025600 | 2010 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Numerical simulation of novel ultrathin barrier n-GaN/InAlN/AlN/GaN HEMT structures: Effect of indium-mole fraction, doping and layer thicknesses
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effects of thicknesses, alloy fraction and doping density of different layers in a novel pseudomorphic n-GaN/InxAl1−xN/AlN/GaN ultrathin barrier heterostructures on band structures and carrier densities were investigated with the help of one-dimensional self-consistent solutions of non-linear Schrödinger–Poisson equations. The calculations include polarization-induced carriers and thermally activated bulk carriers. Important increments in carrier density are found with increasing thickness and decreasing indium-mole fraction of InxAl1−xN ultrathin barrier layer. From an experimental point of view, two different device structures are suggested for the low-bias and high-bias applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 405, Issue 18, 15 September 2010, Pages 4020–4026
Journal: Physica B: Condensed Matter - Volume 405, Issue 18, 15 September 2010, Pages 4020–4026
نویسندگان
P. Tasli, B. Sarikavak, G. Atmaca, K. Elibol, A.F. Kuloglu, S.B. Lisesivdin,