Electrical properties of GaAsN film grown by chemical beam epitaxy

The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm−1 is suggested to be the second harmonic mode of the substitutional N, NAs, LVM around 469 cm−1. The absorption peak around 960 cm−1 is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm−1. The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N-H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction.