کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
194016 | 459783 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Elimination of organic contaminants from silicon wafers using high concentration ozonated-water
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
Treatment using water dissolved highly ozone (ozonated-water) was investigated to eliminate organic contaminations from the surface of silicon wafer. In order to enhance a concentration of ozone in ozonated-water, impurity soluble in ultra pure water, especially CO2, was found to be significant. It is presumed that such impurity plays the role of inhibitor to suppress decomposition of O3. The ozonated-water dissolved ozone of 100 mg/l and above showed excellent properties to eliminate resist as typical model of organic contaminants. It was found that the elimination rate of resist depends not on coexistence of H2O2 but on temperature of ozonated-water.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Electrochimica Acta - Volume 53, Issue 1, 20 November 2007, Pages 16–19
Journal: Electrochimica Acta - Volume 53, Issue 1, 20 November 2007, Pages 16–19
نویسندگان
Kenichi Uemura, Teruo Haibara, Takio Adachi,