کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
195317 | 459812 | 2007 | 7 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process](/preview/png/195317.png)
This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process.In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.
Journal: Electrochimica Acta - Volume 53, Issue 2, 1 December 2007, Pages 271–277