کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
210382 461709 2012 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of Cu–Ni/SiO2 catalyst prepared from a novel precursor, [Cu(H2O)6][Ni(dipic)2].2H2O/SiO2, for water gas shift reaction
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Study of Cu–Ni/SiO2 catalyst prepared from a novel precursor, [Cu(H2O)6][Ni(dipic)2].2H2O/SiO2, for water gas shift reaction
چکیده انگلیسی

Silica-supported copper–nickel bimetallic catalyst was prepared from [Cu(H2O)6][Ni(dipic)2].2H2O/SiO2 precursor. The cationic–anionic complex, [Cu(H2O)6][Ni(dipic)2].2H2O, was prepared from the reaction of (NH4)2[Ni(dipic)2] with Cu(NO3)2.3H2O in water and characterized by elemental analysis, conductometric and various spectroscopy techniques such as FT-IR, UV–vis and atomic absorption. The physicochemical characteristics of both precursor and calcined catalyst were carried out using X-ray diffraction, thermal analysis methods (TGA and DSC), FT-infrared, scanning electron microscopy and BET specific surface area. The catalyst was evaluated for water gas shift reaction. When the Cu–Ni/SiO2 catalyst was used for water gas shift reaction at 300 °C and atmospheric pressure, the CO conversion and CO2 selectivity were about 97.83% and 98.67%, respectively, showing higher activity and selectivity than the reference catalyst prepared by impregnation conventional method.

Silica-supported copper–nickel catalyst was prepared by thermal decomposition of [Cu(H2O)6][Ni(dipic)2].2H2O/SiO2 precursor . This catalyst showed high catalytic activity for water gas shift reaction at 300–380 °C.Figure optionsDownload as PowerPoint slideHighlights
► The method of Cu–Ni/SiO2 catalyst preparation is a simple and suitable way.
► The Cu–Ni catalyst has the high catalytic activity for WGS reaction at 300–380 °C.
► This catalyst presents higher activity than those prepared from other methods.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Fuel Processing Technology - Volume 96, April 2012, Pages 9–15
نویسندگان
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