کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006056 | 1461382 | 2017 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
On the chemical homogeneity of InxGa1âxN alloys - Electron microscopy at the edge of technical limits
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: On the chemical homogeneity of InxGa1âxN alloys - Electron microscopy at the edge of technical limits On the chemical homogeneity of InxGa1âxN alloys - Electron microscopy at the edge of technical limits](/preview/png/5006056.png)
چکیده انگلیسی
Ternary InxGa1âxN alloys became technologically attractive when p-doping was achieved to produce blue and green light emitting diodes (LED)s. Starting in the mid 1990th, investigations of their chemical homogeneity were driven by the need to understand carrier recombination mechanisms in optical device structures to optimize their performance. Transmission electron microscopy (TEM) is the technique of choice to complement optical data evaluations, which suggests the coexistence of local carrier recombination mechanisms based on piezoelectric field effects and on indium clustering in the quantum wells of LEDs. We summarize the historic context of homogeneity investigations using electron microscopy techniques that can principally resolve the question of indium segregation and clustering in InxGa1âxN alloys if optimal sample preparation and electron dose-controlled imaging techniques are employed together with advanced data evaluation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 65, July 2017, Pages 24-34
Journal: Materials Science in Semiconductor Processing - Volume 65, July 2017, Pages 24-34
نویسندگان
Petra Specht, Christian Kisielowski,