کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006141 | 1461384 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Band gap measurement of Bi2MoxW1-xO6 by low loss electron energy loss spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Band gap measurement of Bi2MoxW1-xO6 by low loss electron energy loss spectroscopy Band gap measurement of Bi2MoxW1-xO6 by low loss electron energy loss spectroscopy](/preview/png/5006141.png)
چکیده انگلیسی
This work shows the comparison of high-resolution electron energy loss spectra (HR-EELS) in the low loss region (0â15Â eV) to investigate the electronic structure from koechilinite Bi2MoO6 to rusellite Bi2WO6 varying the stoichiometric relation Bi2MoxW1âxO6. The effect of the Mo to W ratio on the bandgap energy was evaluated on individual particles. Two approximations were considered in order to determine the band gap energy value, the first one was a linear fit and the second one was a mathematical fit. Both analyses are in agreement with those ones collected and analyzed by UV-Vis characterization. Our results suggest a direct electronic transition that increases from about 2.53Â eV to about 3Â eV as the W content increase from 0% to 100% wt. X-ray diffraction was used to corroborate the crystal structure and crystal size; transmission electron microscopy was used to monitor the morphology evolution and UV-Vis spectroscopy in diffuse reflectance mode to determine the Eg. These techniques complement the characterization of these materials.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 184-189
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 184-189
نویسندگان
Damasio Morales-Cruz, Francisco Paraguay-Delgado, Raúl Borja-Urby, SofÃa Basurto-Cereceda, Guillermo Herrera-Pérez, Paolo Longo, Marek Malac,