کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010256 | 1462200 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we demonstrate high performance GaN-based Schottky-barrier ultraviolet (UV) photodetectors with graded doping prepared on patterned sapphire substrates. The fabricated devices exhibit an extremely low dark current density of â¼1.3 Ã 10â8 A/cm2 under â5 V bias, a large UV-to-visible light rejection ratio of â¼4.2 Ã 103, and a peak external quantum efficiency of â¼50.7% at zero bias. Even in the deeper 250-360 nm range, the average external quantum efficiency still remains â¼40%. From the transient response characteristics, the average rising and falling time constants are estimated â¼115 μs and 120 μs, respectively, showing a good electrical and thermal reliability. The specific detectivities Dâ, limited by the thermal equilibrium noise and the low-frequency 1/f noise, are derived â¼5.5 Ã 1013 cm Hz1/2/W (at 0 V) and â¼2.68 Ã 1010 cm Hz1/2 Wâ1 (at â5 V), respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 133, July 2017, Pages 78-82
Journal: Solid-State Electronics - Volume 133, July 2017, Pages 78-82
نویسندگان
Wenjie Mou, Linna Zhao, Leilei Chen, Dawei Yan, Huarong Ma, Guofeng Yang, Xiaofeng Gu,