Electron Beam Induced Deposition on graphene on silicon oxide and hexagonal boron nitride: A comparison of substrates

• We study the effect of electron exposure of graphene on two substrates-SiOx and hBN.
• A typical Electron Beam Induced Deposition (EBID) dose and energy were used.
• We used Raman spectroscopy to monitor the changes in graphene.
• Graphene on SiOx suffered damage whereas graphene on hBN remained intact.
• We further examined the effect of EBID on graphene on hBN with a platinum precursor.

Graphene, a monolayer of carbon atoms arranged in a hexagonal lattice, is an interesting material because of its unique electronic properties. Electron Beam Induced Deposition (EBID) is an attractive direct-write technique to fabricate graphene devices for electronic applications, due to the combination of the high resolution and the versatility of the technique. We study electron induced damage to graphene at the typical EBID energy and dose range. In particular, we investigate the role of the substrate by carrying out electron exposure studies of graphene on two different substrates – silicon oxide and hexagonal boron nitride. Raman measurements reveal the emergence of a disorder D peak upon irradiation of graphene on silicon oxide, whereas graphene on boron nitride does not show this damage. Further, we pattern structures on graphene using EBID from the platinum precursor MeCpPtMe3 and analyze the changes in the Raman spectrum of graphene coming about due to electron stimulated effects in the presence of the precursor.

Figure optionsDownload as PowerPoint slide