Variation in process conditions of porogen-based low-k films: A method to improve performance without changing existing process steps in a sub-100Â nm Cu damascene integration route

The integration process was robust against these variations, showing good electrical yield for all process splits. RC-product was improved when using a shorter curing time and when an anneal step prior to CuO reduction was performed. The use of a thicker capping layer decreased capacitance, showing an improved protection against damage.