کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
539894 | 871275 | 2010 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking](/preview/png/539894.png)
چکیده انگلیسی
3D integration including Through Silicon Vias is more and more considered as the solution to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are hardly required to achieve 3D products and to make design recommendations. In this paper, a 3D process flow is detailed and used to integrate specific RF structures including copper-filled TSVs with 3 μm wide and 15 μm deep dimensions. Both measurements and simulations of these structures lead to the extraction of frequency-dependent parameters and the building of a SPICE compatible π-shaped analytical parametrical model of the TSV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 491–495
Journal: Microelectronic Engineering - Volume 87, Issue 3, March 2010, Pages 491–495
نویسندگان
L. Cadix, C. Bermond, C. Fuchs, A. Farcy, P. Leduc, L. DiCioccio, M. Assous, M. Rousseau, F. Lorut, L.L. Chapelon, B. Flechet, N. Sillon, P. Ancey,