کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5399095 1392673 2016 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Bright luminance from silicon dioxide film with carbon nanotube electron beam exposure
ترجمه فارسی عنوان
روشنایی روشن از فیلم دی اکسید سیلیکون با اشعه الکترونیک نانولوله کربنی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
چکیده انگلیسی
We observed the bright bluish-white luminescence with naked eye from carbon nanotube electron beam exposed silicon dioxide (SiO2) thin film on Si substrate. The luminescence shows a peak intensity at 2.7 eV (460 nm) with wide spread up to 600 nm after the C-beam exposed on SiO2 thin film. The C-beam exposure system is composed of carbon nanotube emitters as electron beam source. The brightness strongly depend on the exposure condition. Luminescence characteristic was optimized by C-beam adjustment to observe with the naked eye. The cause of luminescence in the C-beam exposed SiO2 thin film is analyzed by CL microscopy, FT-IR, AFM and ellipsometer. Decrease of Si-O bonding was observed after C-beam exposure, and this reveals that oxygen deficient defects which are irradiation-sensitive cause 2.7 eV peak of luminescence.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Luminescence - Volume 170, Part 1, February 2016, Pages 312-316
نویسندگان
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