Enhancement of photoluminescence emission intensity of zirconia thin films via aluminum doping for the application of solid state lighting in light emitting diode

► Al doped ZrO2 thin films were deposited on quartz substrates by sol-gel method. ► Crystallinity of the film deteriorated with increase in Al concentration. ► Optical band gap was found to vary as a function of Al concentration. ► Photoluminescence intensity increased with increase in Al concentration. ► Enhancement of PL intensity leads to generation of solid state lighting in LED.