Improved retention characteristic of charge-trapped flash device with sealing layer/Al2O3 or Al2O3/high-k stacked blocking layers

Although programming and erase speeds of charge trapping (CT) flash memory device are improved by using Al2O3 as blocking layer, its retention characteristic is still a main issue. CT flash memory device with Al2O3/high-k stacked blocking layer is proposed in this work to enhance data retention. Moreover, programming and erase speeds are slightly improved. In addition, sealing layer (SL), which is formed by an advanced clustered horizontal furnace between charge trapping layer and Al2O3 as one of the blocking layers is also studied. The retention characteristic is enhanced by SL approach due to lower gate leakage current with less defect. With the combination of SL and Al2O3/high-k stacked blocking layer approaches, retention property can be further improved.

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► CT flash memory device with sealing layer (SL)/Al2O3 stacked blocking layer can enhance data retention.
► CT flash memory device with Al2O3/high-k stacked blocking layer also can enhance data retention.
► With the combination of SL and Al2O3/high-k stacked blocking layer approaches, retention property can be further improved.