SiON and SiO2/HfSiON gate oxides time dependent dielectric breakdown measurements at nanoscale in ultra high vacuum

Time dependent dielectric breakdown (TDDB) measurements on a nano-scale using an AFM tip under ultra high vacuum as upper electrode are systematically compared to device measurements in this paper. Both studies were performed on the same SiON or SiO2/HfSiON gate oxides. The shape factor of the TDDB distribution and the acceleration factor are compared at both scales.

Time dependent dielectric breakdown (TDDB) measurements on a nano-scale using an AFM tip under ultra high vacuum as upper electrode are systematically compared to device measurements in this paper. Both studies were performed on the same SiON or SiO2/HfSiON gate oxides. The shape factor of the TDDB distribution and the acceleration factor are compared at both scales.Figure optionsDownload as PowerPoint slideHighlights
► TDDB distribution Area scaling is investigated at nm2 scale with C-AFM.
► C-AFM TDDB measurements are compared to standard devices measurements for SiON.
► Same Weibull slopes, and acceleration factor from nm2 to mm2 scale are observed.
► Bi-modal Weibull statistic for SiON/HfSiON gate stack is observed at nm2.