کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
540738 871339 2008 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Performance characterization of III–V power devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Performance characterization of III–V power devices
چکیده انگلیسی

The power performance of GaAs/AlGaAs pseudomorphic high electron mobility transistors (PHEMTs) has been modeled by using the statistical Design of Experiment approach. Empirical models for the small signal gain, output power and power added efficiency have been developed. The “walk-out/in” phenomenon has been observed in the devices as a result of power measurements. The evolution of surface photovoltage spectra after RF power stress indicates accumulation of positive electrical charge in the buffer and the surface layer of the devices.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 9, September 2008, Pages 1872–1877
نویسندگان
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