کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541332 1450361 2014 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Improvement of multilayer graphene quality by current stress during thermal CVD
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Improvement of multilayer graphene quality by current stress during thermal CVD
چکیده انگلیسی


• New CVD method by introducing direct current during thermal CVD is proposed.
• Direct current enhanced MLG crystallinity with better surface morphology.
• Direct current enhanced grain growth, carbon deposition, and fcc structure.

To improve crystallinity and surface morphology of multilayer graphene (MLG) films for interconnect applications, a new CVD method which introduces current stress during thermal CVD have been investigated using cobalt (Co) as the catalyst. MLG crystallinity, which is indicated by intensity ratio of G and D peaks in Raman spectra (IG/ID ratio), increased as the current was increased, and the maximum IG/ID ratios of 44 and 30 were obtained at the furnace temperature of 500 and 400 °C, respectively. Comparing with thermal CVD without direct current at the same sample temperature after taking the rising sample temperature into account due to Joule heating, higher IG/ID ratio was still led by the current enhanced CVD (CECVD) with lesser agglomeration. Besides Joule heating that may have influence in enhancing MLG growth, we assume other effects of direct current may have additional influence through grain growth of Co catalytic layer. We believe additional current in thermal CVD will lead to better control of MLG growth for interconnect applications.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 120, 25 May 2014, Pages 200–204
نویسندگان
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