Carrier transport mechanism in La-incorporated high-k dielectric/metal gate stack MOSFETs

In this paper, carrier transport mechanism of MOSFETs with HfLaSiON was analyzed. It was shown that gate current is consisted of Schottky emission, Frenkel–Poole (F–P) emission and Fowler–Nordheim (F–N) tunneling components. Schottky barrier height is calculated to be 0.829 eV from Schottky emission model. Fowler–Nordheim tunneling barrier height was 0.941 eV at high electric field regions and the trap energy level extracted using Frenkel–Poole emission model was 0.907 eV. From the deviation of weak temperature dependence for gate leakage current at low electric field region, TAT mechanism is also considered.