کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
541626 871477 2009 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays
چکیده انگلیسی

AlGaN/GaN high electron mobility transistors (HEMTs) with 0.75 μm gate-length and incorporated C-doped GaN buffer layers have been exposed to gamma radiation. The devices have been irradiated to cumulative doses up to 107 rad. The effect of gamma irradiation on the direct current (DC) and low-frequency noise properties of these devices have been investigated in reference to the unexposed device. The DC and noise characteristics show deteriorating device performance upon the gamma exposure. However, some DC parameters, such as transconductance, tended to recover after the irradiation. The gate leakage current and low-frequency noise power spectra indicate this trend even couple of months after the irradiation.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 1, January 2009, Pages 37–40
نویسندگان
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