Printability of defects in Talbot lithography

• ArF Talbot lithography is proposed for submicron pattern transfer.
• Effect of a defect on the pattern size in simulation and experiment is discussed.
• Talbot lithography is more resistant to mask defects than reduction lithography.
• The focal depth is more than 1 micron even if a defective mask is used.

We conduct a simulation and experiment to investigate the effect of a defect on the pattern size around the defect in ArF Talbot lithography proposed for submicron pattern transfer. We confirm that the focal depth is more than 1 micron even if a defective mask is used. Talbot lithography with a 1:1 mask is more resistant than reduction projection lithography against the effects of mask defects.

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