Self-aligned electron beam lithography of metallic layer sandwiched in a polymer multilayer: Facilitation of vertical organic transistor fabrication

• Electron beam lithography in a multilayer resist is proposed.
• The fidelity of the lithography process and line width resolution is analyzed.
• The process is demonstrated to facilitate vertical organic transistor fabrication.

Electron beam lithography in multilayer of resist including an intermediate metallic layer is proposed for fabrication of novel three dimensional structures. The feasibility of the proposed process and the possible line width resolution has been analyzed. A Self-aligned vertical stack of polymer with an intermediate metallic layer has been achieved using the technique. The three dimensional pattern has been shown to facilitate fabrication of vertical organic transistor. A vertical organic transistor with poly(3-hexylthiophene) as active material is fabricated. The transistor shows high current output at low operating voltage. The direct write technique consists of minimum number of steps and is capable of providing well defined gate geometry for the transistor in contrast with other non-lithographic techniques.

Figure optionsDownload as PowerPoint slide