کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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543106 | 871628 | 2010 | 4 صفحه PDF | دانلود رایگان |
Poly(methyl methacrylate) (PMMA) is a commonly used resist for electron-beam lithography. Some primary reasons for the widespread popularity of PMMA include high resolution and low cost. Single layer PMMA has notably poor characteristics in metal liftoff and sub-15 nm resolution as well as poor line edge roughness. Standard problems with liftoff such as tags, feature removal and lack of solvent penetration were alleviated with a poly-imide lift-off layer which increased resolution and allowed better liftoff. The effect of dense feature proximity over-dose was also reduced with this method. Single lines in metal as small as 23 nm were achieved and denser patterns were resolved with a pitch of 50 nm. These results increase the utility of PMMA as a nanolithographic material for fabricating small metallic features by the use of a liftoff technique.
Journal: Microelectronic Engineering - Volume 87, Issue 12, December 2010, Pages 2629–2632