Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors

This work deals with high-density integrated capacitors for output filters in future micro DC–DC converters. To reach high capacitance density, 3D structures were created in silicon with DRIE followed by MOCVD of ZrO2 (100 nm thick). The step coverage revealed two deposition regimes: a surface reaction controlled regime for cavities aspect ratio lower than 2 and a diffusion-controlled regime for higher aspect ratios. The ZrO2 films present mostly a cubic/tetragonal structure. The permittivity extracted from the measurement is 26.4. These results are discussed with static dielectric responses calculated in literature.