کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543338 | 871653 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors](/preview/png/543338.png)
چکیده انگلیسی
This work deals with high-density integrated capacitors for output filters in future micro DC–DC converters. To reach high capacitance density, 3D structures were created in silicon with DRIE followed by MOCVD of ZrO2 (100 nm thick). The step coverage revealed two deposition regimes: a surface reaction controlled regime for cavities aspect ratio lower than 2 and a diffusion-controlled regime for higher aspect ratios. The ZrO2 films present mostly a cubic/tetragonal structure. The permittivity extracted from the measurement is 26.4. These results are discussed with static dielectric responses calculated in literature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2034–2037
Journal: Microelectronic Engineering - Volume 86, Issue 10, October 2009, Pages 2034–2037
نویسندگان
Magali Brunet, Emmanuel Scheid, Karolina Galicka-Fau, Michel Andrieux, Corinne Legros, Isabelle Gallet, Michaële Herbst, Sylvie Schamm,