کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5436408 1509550 2017 12 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Cu6Sn5 crystal growth mechanisms during solidification of electronic interconnections
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Cu6Sn5 crystal growth mechanisms during solidification of electronic interconnections
چکیده انگلیسی

The growth mechanisms of primary Cu6Sn5 are studied in Sn-Cu alloys and solder joints by combining EBSD, FIB-tomography and synchrotron radiography. With increasing cooling rate and Cu content, Cu6Sn5 crystals developed from faceted hexagonal rods to grooved rods, in-plane branched faceted crystals and, finally, to nonfaceted dendrites. This range of growth morphologies has been rationalised into a kinetic microstructure map. Cu6Sn5 hexagonal rods grew along [0001] bounded by {101¯0} facets and Cu6Sn5 dendrites branched along <405> in the {101¯0} planes. The faceted to nonfaceted transition indicates a kinetic interface roughening transition and a gradual change in mechanism from lateral growth governed by anisotropic attachment kinetics to continuous growth governed by diffusion and curvature. Finally, it is shown that the full range of Cu6Sn5 morphologies that grew for different composition and cooling rate combinations in bulk alloys can be engineered to grow in solder joints made with a single composition (Sn-0.7 wt%Cu/Cu) by altering the peak temperature and the cooling rate.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Acta Materialia - Volume 126, March 2017, Pages 540-551
نویسندگان
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