کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544580 | 871770 | 2011 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks](/preview/png/544580.png)
چکیده انگلیسی
Effects due to 3D level stack on high frequency (HF) properties of 2D self-inductors integrated in the back end of line (BEOL) are investigated. Different stacking processes as Back to Face and Face to Face using a molecular SiO2 bonding or a copper direct bonding are studied in order to determine silicon substrate stack influence on quality factor and frequency bandwidth of 2D self-inductors. Face to Face process with a molecular SiO2 bonding allows improvements of self-inductor performances, better than Back to Face process with a molecular SiO2 bonding and better than Face to Face process using a copper direct bonding.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 734–738
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 734–738
نویسندگان
J. Roullard, S. Capraro, E. Eid, L. Cadix, C. Bermond, T. Lacrevaz, A. Farcy, B. Flechet,