کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544761 | 871782 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks Impact of the TiN electrode deposition on the HfO2 band gap for advanced MOSFET gate stacks](/preview/png/544761.png)
چکیده انگلیسی
The impact of the deposition of a TiN electrode on the high-k oxide HfO2 has been investigated, focussing on the dielectric band gap. After the gate elaboration, a non-destructive approach combining Spectroscopic Ellipsometry (SE), Reflection Electron Energy Loss Spectroscopy (REELS) and X-ray Photoelectron Spectroscopy (XPS) was developed to probe the buried metal/high-k interface. The overall optical band gap is 5.9 ± 0.1 eV with no change after the metal gate deposition. A local reduction of 1 eV is measured near the TiN layer, due to N diffusion at the interface creating N 2p states at the top of the HfO2 valence band. Increased disorder and defects are identified in the high-k after gate elaboration by XPS, REELS and SE.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 72–75
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 72–75
نویسندگان
C. Gaumer, E. Martinez, S. Lhostis, M.-J. Guittet, M. Gros-Jean, J.-P. Barnes, C. Licitra, N. Rochat, N. Barrett, F. Bertin, A. Chabli,