کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545045 | 871804 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Top injection reactor tool with in situ spectroscopic ellipsometry for growth and characterization of ALD thin films
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Ta–N based thin films were grown by thermal atomic layer deposition (ALD) with an alternating supply of the reactant source TBTDET (tert-butylimidotris(diethylamido)tantalum) and NH3 (ammonia). The films were deposited using a newly designed and constructed atomic layer deposition prototype tool combined with several in situ metrology. It was observed that thin films were successfully deposited on a 300 mm Wafer with a saturated growth rate of approximately 0.55 Å/cycle at 270 °C. The as deposited films resulted in the formation of Ta(C)N consisting of 38 at% Ta, 32 at% N and 10 at% C. With in situ spectroscopic ellipsometry (SE) the growing behaviour of the film was investigated and compared to atomic force microscopy (AFM) images.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 527–533
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 527–533
نویسندگان
D. Schmidt, S. Strehle, M. Albert, W. Hentsch, J.W. Bartha,