کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545053 | 871804 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of negative electron beam resists, ma-N2410 and ma-N2405
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have characterized the electron beam lithography (EBL) properties of the new negative tone resists, ma-N2410 and ma-N2405. These negative resists reacts under low electron dose values from 10 to 140 μC/cm2, tested using 10, 20, 28 keV electron beam. There was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the backscattered electrons. Experimental tests were performed under various EBL writing conditions of dose value, developing time, line-width and resist thickness. Our investigation showed that these new commercially available resists have high resolution and high contrast with non-chemical amplification, useful for micro-fabrication application.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 582–586
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 582–586
نویسندگان
Youngsang Kim, Heejun Jeong,