کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489394 | 1524359 | 2017 | 29 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0Â 0Â 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450Â nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150Â K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is â¼63,000 and â¼4600Â cm2/VÂ s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 1-7
Journal: Journal of Crystal Growth - Volume 470, 15 July 2017, Pages 1-7
نویسندگان
Xiaomeng Zhao, Yang Zhang, Min Guan, Lijie Cui, Baoqiang Wang, Zhanping Zhu, Yiping Zeng,