کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5489475 | 1524367 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Generation mechanism of large-size invisible defects on Si epitaxial wafers
ترجمه فارسی عنوان
مکانیسم نسلی از نقص های نامرئی بزرگ در ویفر های اپیتاکسای سی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
چکیده انگلیسی
The new Si epitaxial (epi) defects not seen in scanning electron microscope (SEM) measurements were investigated. Morphologies of these defects were measured by atomic force microscope (AFM) but source of defect was not found in transmission electron microscope (TEM) measurements. In order to find the origin of the invisible defect, we observed the morphological changes of the various substrate defects after epi growth process. Most of the defects were removed during hydrogen (H2) baking and hydrogen chloride (HCl) etching steps, but some particles survived. Among the survived defects, it was confirmed that the non-metallic particles having 200Â nm or more were the origin of the invisible epi defects.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 12-17
Journal: Journal of Crystal Growth - Volume 462, 15 March 2017, Pages 12-17
نویسندگان
Kyuhyung Lee, Jungkil Park, Jungwon Shin, Jayoung Kim, Heebog Kang, Boyoung Lee,